IPW60R165CP coolmos tm power transistor features ? lowest figure-of-merit r on xq g ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant coolmos cp is specially designed for: ? hard switching topologies, for server and telecom maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =7.9 a, v dd =50 v 522 mj avalanche energy, repetitive t ar 2),3) e ar i d =7.9 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...480 v v/ns gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 and m3.5 screws 60 ncm value 21 13 61 30 192 -55 ... 150 0.79 7.9 50 20 v ds @ t j,max 650 v r ds(on),max 0.165 ? q g,typ 39 nc product summary type package ordering code marking IPW60R165CP pg-to247-3-1 sp000095483 6r165p pg-to247-3-1 rev. 2.0 page 1 2006-06-19
IPW60R165CP maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 2) i s,pulse 61 reverse diode d v /d t 4) d v /d t 15 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.65 k/w r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds = v gs , i d =0,09 ma 2.5 3 3.5 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c --1a v ds =600 v, v gs =0 v, t j =150 c -10- gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =12 a, t j =25 c - 0.15 0.165 ? v gs =10 v, i d =12 a, t j =150 c - 0.40 - gate resistance r g f =1 mhz, open drain - 1.9 - ? values thermal resistance, junction - ambient value t c =25 c 12 rev. 2.0 page 2 2006-06-19
IPW60R165CP parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2000 - pf output capacitance c oss - 100 - effective output capacitance, energy related 5) c o(er) -83- effective output capacitance, time related 6) c o(tr) - 220 - turn-on delay time t d(on) -12-ns rise time t r -5- turn-off delay time t d(off) -50- fall time t f -5- gate charge characteristics gate to source charge q gs -9-nc gate to drain charge q gd - 13.0 - gate charge total q g -3952 gate plateau voltage v plateau - 5.0 - v reverse diode diode forward voltage v sd v gs =0 v, i f =12 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 390 - ns reverse recovery charge q rr - 7.5 - c peak reverse recovery current i rrm -38-a 1) j-std20 and jesd22 2) pulse width t p limited by t j,max values v gs =0 v, v ds =100 v, f =1 mhz v dd =400 v, v gs =10v, i d =12 a, r g =3.3 ? v dd =400 v, i d =12 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v 4) i sd =i d , di/dt<=200a/s, v dclink =400v, v peak IPW60R165CP 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics z thjc =f(t p )i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 50 100 150 200 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 4.5 v 5 v 5.5 v 6 v 8 v 10v 12 v 20 v 0 20 40 60 80 0 5 10 15 20 v ds [v] i d [a] limited by on-state resistance rev. 2.0 page 4 2006-06-19
IPW60R165CP 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =12 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98% 0 0.1 0.2 0.3 0.4 0.5 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] c 25 c 150 0 20 40 60 80 100 0246810 v gs [v] i d [a] 4.5 v 5 v 5.5 v 6 v 8 v 10 v 12 v 20 v 0 10 20 30 40 0 5 10 15 20 v ds [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 0 0.2 0.4 0.6 0.8 1 1.2 0 1020304050 i d [a] r ds(on) [ ? ] rev. 2.0 page 5 2006-06-19
IPW60R165CP 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =12 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche energy 12 drain-source breakdown voltage e as =f( t j ); i d =7.9 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 120 v 400 v 0 1 2 3 4 5 6 7 8 9 10 010203040 q gate [nc] v gs [v] 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0 100 200 300 400 500 600 20 60 100 140 180 t j [c] e as [mj] rev. 2.0 page 6 2006-06-19
IPW60R165CP 13 typ. capacitances 14 typ. coss stored energy c =f( v ds ); v gs =0 v; f =1 mhz e oss = f (v ds ) 0 2 4 6 8 10 12 14 0 100 200 300 400 500 600 v ds [v] e oss [j] ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] rev. 2.0 page 7 2006-06-19
IPW60R165CP definition of diode switching characteristics rev. 2.0 page 8 2006-06-19
IPW60R165CP pg-to247-3-1: outline dimensions in mm/inches: rev. 2.0 page 9 2006-06-19
IPW60R165CP published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologie s hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the type s in question please contact your nearest infineon technologies o ffice . infineon technologies components may only be used in life-suppo rt devices or systems with the expres s written approval of infineon technologies, if a failure of suc h components can reasonably be expected t o cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be impl anted in the human body, or to support and/o r maintain and sustain and/or protect human life. if they fail, i t is reasonable to assume that the health of th e user or other persons may be endangered . rev. 2.0 page 10 2006-06-19
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